vishay semiconductors tlhe/g/k/p510. document number 83010 rev. 2.0, 17-sep-07 www.vishay.com 1 high intensity led, ? 5 mm untinted non-diffused features ? untinted non diffused lens ? choice of four colors ? tlh.5101 and tlh.5102 with reduced light matching factor ? tlh.5100 for cost effective design ? medium viewing angle ? lead (pb)-free device 19223 e3 description the tlh.51.. series is a clear, non diffused 5 mm led for outdoor application. these clear lamps utilize the highly developed technologies like alingap and gap. the lens and the viewing angle is optimized to achieve best performance of light output and visibility. the subtypes tlh.5101 and tlh.5102 with their very stable light output are especially recommended for applications where a homogeneous appearance is required. applications ? outdoor led panels ? central high mounted stop lights (chmsl) for motor vehicles ? instrumentation and front panel indicators ? light guide design ? traffic signals product group and package data ? product group: led ? package: 5 mm ? product series: standard ? angle of half intensity: 9 parts table part color, luminous intensity technology tlhk5100 red, i v > 320 mcd allngap on gaas tlhe5100 ye l l o w, i v > 750 mcd allngap on gaas tlhg5100 green, i v > 240 mcd gap on gap TLHG5101 green, i v > 240 mcd gap on gap tlhg5102 green, i v > 240 mcd gap on gap tlhp5100 pure green, i v > 66 mcd gap on gap tlhp5101 pure green, i v > 66 mcd gap on gap tlhp5102 pure green, i v > 66 mcd gap on gap
www.vishay.com 2 document number 83010 rev. 2.0, 17-sep-07 vishay semiconductors tlhe/g/k/p510. note: 1) t amb = 25 c, unless otherwise specified note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmin /i vmax 0.5 note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmin /i vmax 0.5 absolute maximum ratings 1) tlhk51.. , tlhe51.. , tlhg51.. , tlhp51.. parameter test condition symbol value unit reverse voltage v r 6v dc forward current t amb 65 c i f 30 ma surge forward current t p 10 s i fsm 1a power dissipation t amb 65 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ ambient r thja 350 k/w optical and electrical characteristics 1) tlhk51.., red parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 20 ma tlhk5100 i v 320 mcd dominant wavelength i f = 10 ma d 626 630 639 nm peak wavelength i f = 10 ma p 643 nm angle of half intensity i f = 10 ma ? 9 deg forward voltage i f = 20 ma v f 1.9 2.6 v reverse voltage i r = 10 a v r 5v junction capacitance v r = 0, f = 1 mhz c j 15 pf optical and electrical characteristics 1) tlhe51.., yellow parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 20 ma tlhe5100 i v 750 mcd dominant wavelength i f = 10 ma d 581 588 594 nm peak wavelength i f = 10 ma p 590 nm angle of half intensity i f = 10 ma ? 9 deg forward voltage i f = 20 ma v f 22.6v reverse voltage i r = 10 a v r 5v junction capacitance v r = 0, f = 1 mhz c j 15 pf
document number 83010 rev. 2.0, 17-sep-07 www.vishay.com 3 vishay semiconductors tlhe/g/k/p510. note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmin /i vmax 0.5 note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmin /i vmax 0.5 typical characteristics t amb = 25 c, unless otherwise specified optical and electrical characteristics 1) tlhg51.., green parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 20 ma tlhg5100 i v 240 mcd TLHG5101 i v 240 480 mcd tlhg5102 i v 240 640 mcd dominant wavelength i f = 10 ma d 562 575 nm peak wavelength i f = 10 ma p 565 nm angle of half intensity i f = 10 ma ? 9 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf optical and electrical characteristics 1) tlhp51.., pure green parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 20 ma tlhp5100 i v 66 mcd tlhp5101 i v 66 132 mcd tlhp5102 i v 66 200 mcd dominant wavelength i f = 10 ma d 555 565 nm peak wavelength i f = 10 ma p 555 nm angle of half intensity i f = 10 ma ? 9 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf figure 1. power dissipation vs. ambient temperature 0 25 50 75 100 125 95 1091 8 p v - po w er dissipation (m w ) t am b - am b ient temperat u re (c) 0 100 8 0 60 40 20 figure 2. forward current vs. ambient temperature 0 10 20 30 40 60 95 10046 50 i f - for w ard c u rrent (ma) 0 100 8 0 60 40 20 t am b - am b ient temperat u re (c)
www.vishay.com 4 document number 83010 rev. 2.0, 17-sep-07 vishay semiconductors tlhe/g/k/p510. figure 3. forward current vs. pulse length figure 4. relative radiant sensit ivity vs. angular displacement figure 5. forward current vs. forward voltage 0.01 0.1 1 10 1 10 100 1000 10000 100 95 10025 0.02 0.05 0.1 0.2 1 0.5 t am b 8 5 c t p /t = 0.01 i f - for w ard c u rrent (ma) t p - p u lse length (ms) 0.4 0.2 0 0.2 0.4 s rel - relati v e sensiti v ity 0.6 94 8 351 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 1 10 100 1 1.5 2 2.5 3 v f - for w ard v oltage ( v ) 95 10 8 7 8 r i f - for w ard c u rrent (ma) red figure 6. rel. luminous intensity vs. ambient temperature figure 7. specific luminous intensity vs. forward current figure 8. relative luminous intensity vs. forward current 95 10 88 0r i f = 10 ma red 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0 10203040506070 8 0 90 100 t am b - am b ient temperat u re (c) i v rel - relati v e l u mino u s intensity 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 1 10 100 i f - for w ard c u rrent (ma) 96 115 8 9r i v rel - specific l u mino u s intensity red 0.01 0.1 1 10 1 10 100 i f - for w ard c u rrent (ma) 96 115 88 r i v rel - relati v e l u mino u s intensity red
document number 83010 rev. 2.0, 17-sep-07 www.vishay.com 5 vishay semiconductors tlhe/g/k/p510. figure 9. relative intensity vs. wavelength figure 10. rel. luminous intens ity vs. ambient temperature figure 11. specific luminous intensity vs. forward current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 600 610 620 630 640 650 660 670 6 8 0 690 700 - w a v elength (nm) 96 12075r i v rel - relati v e l u mino u s intensity i f = 10 ma red 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0 10203040506070 8 0 90 100 t am b - am b ient temperat u re (c) 95 10 88 0y i v rel - relati v e l u mino u s intensity i f = 10 ma yello w 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 1 10 100 i f - for w ard c u rrent (ma) 96 115 8 9y i v rel - specific l u mino u s intensity yello w figure 12. relative luminous intensity vs. forward current figure 13. relative intensity vs. wavelength figure 14. forward current vs. forward voltage 0.01 0.1 1 10 1 10 100 i f - for w ard c u rrent (ma) 96 115 88 y i v rel - relati v e l u mino u s intensity yello w 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 550 570 590 610 630 650 - w a v elength (nm) 95 10 88 1y yello w i rel - relati v e intensity 0.1 1 10 100 1000 10 8 6 4 2 0 95 10034 v f - for w ard v oltage ( v ) i - for w ard c u rrent (ma) f green t p /t = 0.001 t p =10 s
www.vishay.com 6 document number 83010 rev. 2.0, 17-sep-07 vishay semiconductors tlhe/g/k/p510. figure 15. rel. luminous intens ity vs. ambient temperature figure 16. specific luminous intensity vs. forward current figure 17. relative luminous intensity vs. forward current 0 0.4 0. 8 1.2 1.6 95 10035 i - relati v e l u mino u s intensity v rel green i f = 10 ma t am b - am b ient temperat u re (c) 20 40 60 8 0 0 100 10 20 50 100 200 0 0.4 0. 8 1.2 1.6 2.4 95 10263 500 v rel 2.0 green i - specific l u mino u s intensity i f (ma) 0.5 0.2 0.1 0.05 0.02 1 t p /t i f - for w ard c u rrent (ma) 100 green 0.1 1 10 95 10037 i - relati v e l u mino u s intensity v rel 10 1 figure 18. relative intensity vs. wavelength figure 19. forward current vs. forward voltage figure 20. rel. luminous intens ity vs. ambient temperature 520 540 560 5 8 0 600 0 0.2 0.4 0.6 0. 8 1.2 620 95 1003 8 - w a v elength (nm) 1.0 green i - relati v e l u mino u s intensity v rel 02 0.1 1 10 100 5 95 99 88 p u re green f i - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) 13 4 0 0.4 0. 8 1.2 1.6 2.0 95 9991 p u re green i - relati v e l u mino u s intensity v rel t am b - am b ient temperat u re (c) 0 100 8 0 60 40 20
document number 83010 rev. 2.0, 17-sep-07 www.vishay.com 7 vishay semiconductors tlhe/g/k/p510. package dimensions in millimeters figure 21. specific luminous intensity vs. forward current figure 22. relative luminous intensity vs. forward current 95 10261 10 1000 100 0 0.4 0. 8 1.2 1.6 2.4 2.0 p u re green i - specific l u mino u s fl u x spec i f - for w ard c u rrent (ma) 02 0.1 1 10 100 5 95 99 88 p u re green f i - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) 13 4 figure 23. relative intensity vs. wavelength 500 520 540 560 5 8 0 0 0.2 0.4 0.6 0. 8 1.2 600 95 10325 1.0 p u re green - w a v elength (nm) i - relati v e l u mino u s intensity v rel 9612121
www.vishay.com 8 document number 83010 rev. 2.0, 17-sep-07 vishay semiconductors tlhe/g/k/p510. ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employee s and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cle an air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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